SB10150FCT-SB10200FCT

10A High Voltage Dual Schottky Barrier Rectifier Diode

Feature			Mechanical Data
Schottky Barrier Chip			Case: TO-220, Molded Plastic
Guard Ring for Transient Protection			Terminals: Plated Leads Solderable per MIL-STD-202, Method 208
Low Forward Voltage Drop			Polarity: See Diagram
Low Reverse leakage Current			Weight: 2.24 grams (approx)
High Surge Current Capability			Mounting Position: Any
Plastic Material has UL Flammability Classification 94V-0			Mounting Torque: 11.5 cm-kg (10 in-lbs) max.
			Lead Free: For RoHS / Lead Free Version Add “-LF” Suffix to part Number.
Case: TO-220 Type		Voltage Range: 150V~200V	Current: 10A
Maximum Ratings and Electrical Characteristics @T_A=25℃ unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load For capacitive load, derate current by 20%.
Characteristics			Symbol	SB	SB	Unit
				10150CT	10200CT
Peak Repetitive Reverse Voltage			V_RRM	150	200	V
Working Peak Reverse Voltage			V_RWM	150	200	V
DC Blocking Voltage			V_R	150	150	V
RMS Reverse Voltage			V_R(RMS)	105	140	V
Average Rectified Output Current @T_C=95℃			I_O	10	10	A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)			I_FSM	150	150	A
Forward Voltage @I_F=5.0A			V_FM	0.92	0.92	V
Peak Reverse Current @T_A = 25℃			I_RM	0.5	0.5	mA
At Rated DC Blocking Vol. @T_A=100℃				50	50	mA
Typical Junction Capacitance (Note 1)			C_j	700	700	pF
Operating and Storage Temperature Range			T_j,T_STG	-65 to +150		℃
Note 1:	Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.