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CD4148WP

Chip Switching Diode CD4148WP (1206 75V 0.15A)

PDF File CD4148WP (1206 75V 0.15A)

CD FEATURE

  • Silicon epitaxial planar diode
  • Surface comut patern , available in various dimension included 0805 & 0603
  • Lead free and RoHS compliance components
  • Fast AC switching input as rectified circuit and high reverse voltage location

直流輸入和高電壓位置電路圖 And location of high voltage DC input circuit ;   高電壓位置電路圖 Location of high voltage circuit

ELECTRICAL CHARACTERISTICS
Parameter at Tamb = 25 Symbol Value Unit
Reverse Voltage: VR 75 V
Peak Reverse Voltage: VRM 100 V
Forward Continuous Current: IFM 300 mA
Average rectified current sin half wave rectification with resistive load f>50Hz IF(AV) 150¹ mA
Surge Forward Current at t<1s and and Tj=25 IFSM 500 mA
Power Dissipation Ptot 400¹ mW
Forward Voltage at IF=100mA VF 1.0 max V
Leakage Current at = VR=20V IR 25 max nA
Leakage Current at = VR=75V IR 5 max μA
Leakage Current at = VR=20V, TJ=150 IR 50 max μA
Capacitance at VF=VR=0V Ctot 4 max pF
Voltage rise when switching ON, Testes with 50mA pulses, TP=0.1us, risetime <20ns,  Fp=(5-100)KHz. Vfr 2.5 max V
Reverse Recovery Time at IF=100mA to IR=1mA, VR=V6, RL=100Ω trr 4.0 max ns
Rectification efficiency at f=100MHZ, VRF=2V nr 45 min %
1. Valid provided that electrodes are kept at ambient temperature.
FEATURE
Silicon epitaxial planar diode (矽平面磊晶技術)
Surface mount pattern , available in various dimension included 0805 & 0603 (網印塑封表面封裝工藝,制成不同封裝型號 0805 0603 易於選用,)
Lead free and RoHS compliance components. (無鉛制程符合RoHS環保要求條件)
Fast AC switching input as rectified circuit and high reverse voltage location. (快速開關作為糾正輸入電路和很高的反向電壓位置)

 

Parameter at Tamb = 25 (貼片二極管特性參數) SINLOON®
型號 類型 VRRM IFSM IF(AV) 型號 類型 VRRM IFSM IF(AV)
Part No. Type (V) (mA) (mA) Part No. Type (V) (mA) (mA)
BAV19WS SOD-323 100V 250 400 CD4148WSN 0805 100 500 150
BAV20WS SOD-323 150V 250 400 CD4148WSP 0805 75 500 150
BAV21WS SOD-323 200V 250 400 CD4148WTN 0603 90V 500 150
BAV56 SOT-23 75 200 300 CD4148WTP 0603 75 500 150
BAV56W SOT-323 75 200 300 CDBAV21W 1206 200 500 200
BAV70 SOT-23 75 200 300 CDBAV21WS 0805 200 500 200
BAV70W SOT-323 75 200 300 CDBAW56 SOT-23 70 200 200
BAV99 SOT-23 75 200 300 CDBAV70 SOT-23 70 200 200
BAV99W SOT-323 75 200 300 CDBAV99 SOT-23 70 200 200
CD4148WN 1206 100 500 150 IN4148W SOD-123 75 200 150
CD4148WP 1206 75 500 150 MMBD4148 SOT-23 75 200 300

Reture to Chip Diode

4148

最近更新在 週四, 10 三月 2016 13:04  
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Newsflash

TO247 Power Resistor - 100W

按此還有更多 更多... TO247 100W 功率電阻系列

TO247 100W 厚膜功率電阻

特點:
◆ 大功率, 無感,安裝容易。High-power, non-inductive, easy to install。
◆ M3螺絲固定壓孔,增強電阻熱導性。M 3 screw hole pressure, increased resistance of thermal conductivity
◆ 基板中心溫度 ≦25℃ 額定功率 100瓦。Power rated 100W at core temperature ceramic substrate ≦25℃。
◆ 標準TO247模壓封裝尺寸,陶瓷基板外露制造。Standard TO247 package size hole pressure, production of ceramic substrate exposed。
◆ 阻值範圍由 0.2R ~ 1M Ω 誤差率 ±1% ,±5%, TCR ±50/±100/±200ppm/℃。
    Resistance range: 0.2R ~ 1M Ω, Tolerance Range: ±1%, ±5%. TCR: ±50/±100/±200ppm/℃。
◆TO247 封裝(陶瓷基板增強型)和TO220有相同的結果特點,採用了陶瓷基板直接外露結構,並使用特制用金屬片使其額定功率和脈衝電荷能力比較TO220有更大的提升。
    TO247 package enhanced ceramic substrate and TO220 features with the same results, using a ceramic substrate directly exposed structure, and the use of special sheet metal to the rated power and pulse charge capacity is relatively greater increase TO220.