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小型化蕭特基二極管 |
TB1S ~ TB10S |
| Voltage Range: 100V-1KV |
1.0A Surface Mount Glass Passivated Bridge Rectifier |
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  TB1S - TB10S 100V-1000V 1.0A |
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| FEATURE: |
MECHANICAL CHARACTERISTICS: |
| High reliability |
Case: TB-S Molded Plastic |
| Low forward voltage drop |
Weight: 0.10 Grams (approx) |
| High surge current capability |
Marking: Type number |
| Glass passivated die construction |
Polarity: As marked on case |
| Ultra-slim 1.5mm max. case height |
Terminals: Plated leads solder able per |
| Designed for surface mount application |
MIL-STD-202, Method 208. |
| Plastic Material - UL Recognition Flammability |
Lead Free for Rohm / Lead free version |
| Classification 94V-0 |
and "LF" suffix to part number. |
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| Maximum Ratings and Data specification @TA=25℃ unless otherwise specified |
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SINLOON |
| Sigle, phase half wave 60Hz resistive or inductive load, for capacitive load, derate current by 20%. |
| Parameter at Tamb = 25℃ |
Symbol |
Part Code |
Unit |
| TB1S |
TB2S |
TB4S |
TB6S |
TB8S |
TB10S |
| DC Blocking Voltage: |
VR |
100 |
200 |
400 |
600 |
800 |
1000 |
V |
| Peak Repetitive Reverse Voltage |
VRRM |
| Working Peak Reverse Voltage |
VRWM |
| RMS Reverse Voltage |
VR(RMS) |
70 |
140 |
280 |
420 |
560 |
700 |
V |
| Average Rectified Output Current @TA=25℃ (1) |
Io |
1.0 |
1.0 |
1.0 |
1.0 |
1.0 |
1.0 |
A |
| Non-Repetitive Peak Forward Surge Current 8.3ms Single |
IFSM |
30 |
30 |
30 |
30 |
30 |
30 |
A |
| half sine-wave superimposed on rated load (JEDC Method) |
| Forward Voltage Diode |
@IF = 0.4A |
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VFM |
0.95 |
0.95 |
0.95 |
0.95 |
0.95 |
0.95 |
V |
| @IF = 1.0A |
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1.10 |
1.10 |
1.10 |
1.10 |
1.10 |
1.10 |
| Peak Reverse Current @TA = 25℃ |
IRM |
5.0 |
5.0 |
5.0 |
5.0 |
5.0 |
5.0 |
μA |
| At Rated DC Blocking Voltage @TA = 125℃ |
500 |
500 |
500 |
500 |
500 |
500 |
| Typical Junction Capacitance per leg (2) |
Cj |
10.0 |
10.0 |
10.0 |
10.0 |
10.0 |
10.0 |
pF |
| Thermal resistance junction to ambient (1) |
RθJA |
62.5 |
62.5 |
62.5 |
62.5 |
62.5 |
62.5 |
℃/W |
| Thermal resistance junction to lead (3) |
25 |
25 |
25 |
25 |
25 |
25 |
| Operating and Storage Temperature Range |
TJ,TSTG. |
-50 to +150 |
℃ |
| Note1 : |
Mounted on aluminum substrate PCB with 1.3x1.3mm pad areas. |
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| Note2: |
Measure at 1.0 MHz and applied reverse voltage of 4.0V DC |
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| Note3: |
Mounted on glass epoxy PCB with 1.3x1.3mm pad areas. |
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電子應用原理
