10A High Voltage Dual Schottky Barrier Rectifier Diode
10A SB10150FCT-SB10200FCT (150V-200V)
| Feature | Mechanical Data | |||||||
| Schottky Barrier Chip | Case: TO-220, Molded Plastic | |||||||
| Guard Ring for Transient Protection | Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 | |||||||
| Low Forward Voltage Drop | Polarity: See Diagram | |||||||
| Low Reverse leakage Current | Weight: 2.24 grams (approx) | |||||||
| High Surge Current Capability | Mounting Position: Any | |||||||
| Plastic Material has UL Flammability Classification 94V-0 | Mounting Torque: 11.5 cm-kg (10 in-lbs) max. | |||||||
| Lead Free: For RoHS / Lead Free Version Add “-LF” Suffix to part Number. | ||||||||
| Case: TO-220 Type | Voltage Range: 150V~200V | Current: 10A | ||||||
| Maximum Ratings and Electrical Characteristics @TA=25℃ unless otherwise specified | ||||||||
| Single Phase, half wave, 60Hz, resistive or inductive load For capacitive load, derate current by 20%. | ||||||||
| Characteristics | Symbol | SB | SB | Unit | ||||
| 10150CT | 10200CT | |||||||
| Peak Repetitive Reverse Voltage | VRRM | 150 | 200 | V | ||||
| Working Peak Reverse Voltage | VRWM | 150 | 200 | V | ||||
| DC Blocking Voltage | VR | 150 | 150 | V | ||||
| RMS Reverse Voltage | VR(RMS) | 105 | 140 | V | ||||
| Average Rectified Output Current @TC=95℃ | IO | 10 | 10 | A | ||||
| Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) | IFSM | 150 | 150 | A | ||||
| Forward Voltage @IF=5.0A | VFM | 0.92 | 0.92 | V | ||||
| Peak Reverse Current @TA = 25℃ | IRM | 0.5 | 0.5 | mA | ||||
| At Rated DC Blocking Vol. @TA=100℃ | 50 | 50 | mA |  |
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| Typical Junction Capacitance (Note 1) | Cj | 700 | 700 | pF | ||||
| Operating and Storage Temperature Range | Tj,TSTG | -65 to +150 | ℃ | |||||
| Note 1: | Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. | |||||||
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